STW15N80K5
- Mfr.Part #
- STW15N80K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 14A TO247
- Stock
- 10,005
- In Stock :
- 10,005
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- SuperMESH5™
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 800V
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 17 Weeks
- Element Configuration :
- Single
- Base Part Number :
- STW15N
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 19 ns
- Pulsed Drain Current-Max (IDM) :
- 56A
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 100V
- Width :
- 5.15mm
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 44 ns
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Number of Terminations :
- 3
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Length :
- 15.75mm
- Power Dissipation-Max :
- 190W Tc
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Continuous Drain Current (ID) :
- 14A
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 20.15mm
- Package / Case :
- TO-247-3
- Drain to Source Voltage (Vdss) :
- 800V
- Rds On (Max) @ Id, Vgs :
- 375m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Power Dissipation :
- 190W
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Datasheets
- STW15N80K5

N-Channel Tube 375m Ω @ 7A, 10V ±30V 1100pF @ 100V 32nC @ 10V 800V TO-247-3
STW15N80K5 Description
STW15N80K5 is a very high voltage N-channel Power MOSFET designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. For applications needing a high power density and efficiency, the end result is a significantly reduced on-resistance and ultra-low gate charge.
STW15N80K5 Features
-
Industry's lowest RDS(on) x area
-
Industry's best figure of merit (FOM)
-
Ultra-low gate charge
-
100% avalanche tested
-
Zener-protected
STW15N80K5 Applications
-
Switching applications
-
High voltage application
-
Monitor equipment application
-
TV and monitor class B video circuitry
-
Switching circuits
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