STW150NF55

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Number of Elements :

1

Packaging :

Tube

JESD-609 Code :

e3

Mount :

Through Hole

Power Dissipation :

300W

Number of Terminations :

3

Drain to Source Breakdown Voltage :

55V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

300W Tc

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

480A

Radiation Hardening :

No

Transistor Application :

SWITCHING

Turn-Off Delay Time :

140 ns

Case Connection :

DRAIN

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

35 ns

Drain-source On Resistance-Max :

0.006Ohm

Base Part Number :

STW150

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

80 ns

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

ECCN Code :

EAR99

Package / Case :

TO-247-3

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

850 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

180ns

Continuous Drain Current (ID) :

120A

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Rds On (Max) @ Id, Vgs :

6m Ω @ 60A, 10V

Series :

STripFET™ II

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V