STW14NM65N
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- Mfr.Part #
- STW14NM65N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 12A TO247-3
- Stock
- 26,598
- In Stock ：
- 26,598
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Continuous Drain Current (ID) :
- 12A
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Resistance :
- 380mOhm
- Pulsed Drain Current-Max (IDM) :
- 48A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 50V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 6A, 10V
- Power Dissipation :
- 125W
- Rise Time :
- 13ns
- Mount :
- Through Hole
- Power Dissipation-Max :
- 125W Tc
- Fall Time (Typ) :
- 20 ns
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 55 ns
- Avalanche Energy Rating (Eas) :
- 300 mJ
- JESD-30 Code :
- R-PSFM-T3
- Reach Compliance Code :
- not_compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Series :
- MDmesh™ II
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 25V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±25V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-247-3
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Base Part Number :
- STW14N
- Operating Temperature :
- 150°C TJ
- Drain to Source Breakdown Voltage :
- 650V
- Datasheets
- STW14NM65N
N-Channel Tube 380m Ω @ 6A, 10V ±25V 1300pF @ 50V 45nC @ 10V TO-247-3
STW14NM65N Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 300 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1300pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 12A.With a drain-source breakdown voltage of 650V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 650V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 55 ns.Peak drain current for this device is 48A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
STW14NM65N Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 48A.
STW14NM65N Applications
There are a lot of STMicroelectronics
STW14NM65N applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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