STW13NM50N
- Mfr.Part #
- STW13NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 12A TO247-3
- Stock
- 42,261
- In Stock :
- 42,261
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Resistance :
- 320mOhm
- Base Part Number :
- STW13N
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 320m Ω @ 6A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- MATTE TIN/TIN SILVER COPPER
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 960pF @ 50V
- Vgs (Max) :
- ±25V
- Turn-Off Delay Time :
- 40 ns
- Pulsed Drain Current-Max (IDM) :
- 48A
- Drain to Source Breakdown Voltage :
- 500V
- Lead Free :
- Lead Free
- Power Dissipation :
- 100W
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Pin Count :
- 3
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 12A
- Power Dissipation-Max :
- 100W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 15ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Series :
- MDmesh™ II
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 10 ns
- Gate to Source Voltage (Vgs) :
- 25V
- Package / Case :
- TO-247-3
- Datasheets
- STW13NM50N

N-Channel Tube 320m Ω @ 6A, 10V ±25V 960pF @ 50V 30nC @ 10V TO-247-3
STW13NM50N Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 960pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [40 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 48A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STW13NM50N Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 48A.
STW13NM50N Applications
There are a lot of STMicroelectronics
STW13NM50N applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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