STW13NM50N

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Mfr.Part #
STW13NM50N
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 12A TO247-3
Stock
42,261
In Stock :
42,261

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Resistance :
320mOhm
Base Part Number :
STW13N
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Rds On (Max) @ Id, Vgs :
320m Ω @ 6A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Finish :
MATTE TIN/TIN SILVER COPPER
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
960pF @ 50V
Vgs (Max) :
±25V
Turn-Off Delay Time :
40 ns
Pulsed Drain Current-Max (IDM) :
48A
Drain to Source Breakdown Voltage :
500V
Lead Free :
Lead Free
Power Dissipation :
100W
Avalanche Energy Rating (Eas) :
200 mJ
Pin Count :
3
Element Configuration :
Single
Continuous Drain Current (ID) :
12A
Power Dissipation-Max :
100W Tc
Operating Mode :
ENHANCEMENT MODE
Rise Time :
15ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Series :
MDmesh™ II
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
JESD-30 Code :
R-PSFM-T3
Transistor Element Material :
SILICON
Radiation Hardening :
No
Number of Terminations :
3
Mount :
Through Hole
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Application :
SWITCHING
Fall Time (Typ) :
10 ns
Gate to Source Voltage (Vgs) :
25V
Package / Case :
TO-247-3
Datasheets
STW13NM50N
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STW13NM50N from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STW13N, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-247-3, STW13NM50N pinout, STW13NM50N datasheet PDF, STW13NM50N amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STW13NM50N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STW13NM50N


N-Channel Tube 320m Ω @ 6A, 10V ±25V 960pF @ 50V 30nC @ 10V TO-247-3

STW13NM50N Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 960pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [40 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 48A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

STW13NM50N Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 48A.


STW13NM50N Applications


There are a lot of STMicroelectronics
STW13NM50N applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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