STW13NK80Z
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- Mfr.Part #
- STW13NK80Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 12A TO247-3
- Stock
- 7,664
- In Stock ：
- 7,664
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.65Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 800V
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 22ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 95 ns
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Reach Compliance Code :
- not_compliant
- Rds On (Max) @ Id, Vgs :
- 650m Ω @ 6A, 10V
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- Pulsed Drain Current-Max (IDM) :
- 48A
- Series :
- SuperMESH™
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Voltage - Rated DC :
- 800V
- Fall Time (Typ) :
- 55 ns
- Power Dissipation :
- 230W
- Current Rating :
- 12A
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 450 mJ
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 12A
- Input Capacitance (Ciss) (Max) @ Vds :
- 3480pF @ 25V
- Power Dissipation-Max :
- 230W Tc
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Base Part Number :
- STW13N
- Package / Case :
- TO-247-3
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Datasheets
- STW13NK80Z
N-Channel Tube 650m Ω @ 6A, 10V ±30V 3480pF @ 25V 155nC @ 10V TO-247-3
STW13NK80Z Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 450 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3480pF @ 25V.This device conducts a continuous drain current (ID) of 12A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 95 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 48A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STW13NK80Z Features
the avalanche energy rating (Eas) is 450 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 48A.
STW13NK80Z Applications
There are a lot of STMicroelectronics
STW13NK80Z applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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