STW13NB60

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

700 mJ

HTS Code :

8541.29.00.95

Element Configuration :

Single

Base Part Number :

STW13N

Pin Count :

3

Additional Feature :

AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

15 ns

Power Dissipation-Max :

190W Tc

Qualification Status :

Not Qualified

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Voltage - Rated DC :

600V

Package / Case :

TO-247-3

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

52A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Power Dissipation :

190W

Rise Time :

13ns

Series :

PowerMESH™

Current Rating :

13A

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

13A

Vgs(th) (Max) @ Id :

5V @ 250μA

Rds On (Max) @ Id, Vgs :

540m Ω @ 6.5A, 10V

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.54Ohm

Mount :

Through Hole

FET Type :

N-Channel

Vgs (Max) :

±30V

Lead Free :

Contains Lead

Drain to Source Breakdown Voltage :

600V

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant