STW12NM60N
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- Mfr.Part #
- STW12NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A TO247-3
- Stock
- 44,977
- In Stock ：
- 44,977
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 10A
- Transistor Element Material :
- SILICON
- Series :
- MDmesh™
- Turn On Delay Time :
- 15 ns
- Gate to Source Voltage (Vgs) :
- 25V
- Package / Case :
- TO-247-3
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Fall Time (Typ) :
- 10 ns
- JESD-609 Code :
- e3/e1
- Base Part Number :
- STW12N
- Terminal Finish :
- MATTE TIN/TIN SILVER COPPER
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 960pF @ 50V
- Drain to Source Breakdown Voltage :
- 600V
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 410m Ω @ 5A, 10V
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 40A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±25V
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 30.5nC @ 10V
- Power Dissipation :
- 90W
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 90W Tc
- Resistance :
- 410mOhm
- Turn-Off Delay Time :
- 60 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-30 Code :
- R-PSFM-T3
- Rise Time :
- 9ns
- Datasheets
- STW12NM60N
N-Channel Tube 410m Ω @ 5A, 10V ±25V 960pF @ 50V 30.5nC @ 10V TO-247-3
STW12NM60N Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 960pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STW12NM60N Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 40A.
STW12NM60N Applications
There are a lot of STMicroelectronics
STW12NM60N applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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