STW12N170K5
- Mfr.Part #
- STW12N170K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1700V 5A TO247
- Stock
- 20,593
- In Stock :
- 20,593
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1380pF @ 100V
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Package / Case :
- TO-247-3
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 1700V
- Series :
- MDmesh™ K5
- Power Dissipation-Max :
- 250W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 17 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 2.9 Ω @ 2.5A, 10V
- Datasheets
- STW12N170K5

N-Channel 2.9 Ω @ 2.5A, 10V ±30V 1380pF @ 100V 37nC @ 10V 1700V TO-247-3
STW12N170K5 Description
This MDmeshTM K5 technology-based, patented vertical structure is used to create this very high voltage N-channel Power MOSFET. For applications needing a high power density and efficiency, the end result is a significantly reduced on-resistance and ultra-low gate charge.
STW12N170K5 Features
-
Industry?ˉs lowest RDS(on) x area
-
Industry?ˉs best FoM (figure of merit)
-
Ultra-low gate charge
-
100% avalanche tested
-
Zener-protected
STW12N170K5 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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