STS1DNC45

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Terminations :

8

Current Rating :

400mA

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Drain to Source Breakdown Voltage :

450V

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 25V

Terminal Form :

Gull wing

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Drain Current-Max (Abs) (ID) :

0.4A

Pulsed Drain Current-Max (IDM) :

1.6A

Operating Temperature :

150°C TJ

Series :

SuperMESH™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

30 mJ

Transistor Element Material :

SILICON

Number of Elements :

2

Number of Pins :

8

Power Dissipation :

2W

Continuous Drain Current (ID) :

400mA

Terminal Finish :

Matte Tin (Sn) - annealed

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Lead Free :

Lead Free

Pin Count :

8

Max Power Dissipation :

1.6W

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

450V

Gate to Source Voltage (Vgs) :

30V

Base Part Number :

STS1D

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

4 ns

Turn On Delay Time :

6.7 ns

Rds On (Max) @ Id, Vgs :

4.5 Ω @ 500mA, 10V

Transistor Application :

SWITCHING

Rise Time :

4ns

Time@Peak Reflow Temperature-Max (s) :

30

FET Feature :

Standard