STS10DN3LH5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

2.5W

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

475pF @ 25V

Avalanche Energy Rating (Eas) :

50 mJ

Number of Elements :

2

Factory Lead Time :

14 Weeks

Power Dissipation :

2.5W

Base Part Number :

STS10

FET Type :

2 N-Channel (Dual)

Turn On Delay Time :

4 ns

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Fall Time (Typ) :

2.8 ns

Mounting Type :

Surface Mount

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Rise Time :

22ns

JESD-609 Code :

e4

Series :

STripFET™ V

Number of Pins :

8

Gate to Source Voltage (Vgs) :

22V

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 5V

Continuous Drain Current (ID) :

10A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Resistance :

21mOhm

Mount :

Surface Mount

Terminal Form :

Gull wing

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

40A

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

21m Ω @ 5A, 10V

Drain to Source Breakdown Voltage :

30V

ECCN Code :

EAR99

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Vgs(th) (Max) @ Id :

1V @ 250μA

Turn-Off Delay Time :

13 ns