STS11N3LLH5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

724pF @ 25V

Transistor Application :

SWITCHING

FET Type :

N-Channel

JESD-609 Code :

e4

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Number of Terminations :

8

Pulsed Drain Current-Max (IDM) :

44A

Vgs (Max) :

+22V, -20V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Power Dissipation-Max :

2.7W Tc

Turn-Off Delay Time :

21 ns

Number of Elements :

1

Element Configuration :

Single

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

1 V

Fall Time (Typ) :

3.5 ns

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

STripFET™ V

Base Part Number :

STS11

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Terminal Form :

Gull wing

Number of Pins :

8

Rise Time :

4.2ns

Resistance :

13.2mOhm

Turn On Delay Time :

4 ns

Rds On (Max) @ Id, Vgs :

14m Ω @ 5.5A, 10V

Radiation Hardening :

No

Threshold Voltage :

1V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

11A

Gate to Source Voltage (Vgs) :

22V

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

2.7W

Vgs(th) (Max) @ Id :

1V @ 250μA