STS11N3LLH5
- Mfr.Part #
- STS11N3LLH5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11A 8SO
- Stock
- 80,117
- In Stock :
- 80,117
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 4.5V
- Fall Time (Typ) :
- 3.5 ns
- Power Dissipation-Max :
- 2.7W Tc
- Continuous Drain Current (ID) :
- 11A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 4.2ns
- Number of Pins :
- 8
- Number of Terminations :
- 8
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 44A
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Power Dissipation :
- 2.7W
- Input Capacitance (Ciss) (Max) @ Vds :
- 724pF @ 25V
- Pin Count :
- 8
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Nominal Vgs :
- 1 V
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 21 ns
- Gate to Source Voltage (Vgs) :
- 22V
- Resistance :
- 13.2mOhm
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drain to Source Breakdown Voltage :
- 30V
- JESD-609 Code :
- e4
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Position :
- Dual
- Turn On Delay Time :
- 4 ns
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 5.5A, 10V
- Element Configuration :
- Single
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 1V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Series :
- STripFET™ V
- Base Part Number :
- STS11
- Vgs (Max) :
- +22V, -20V
- Datasheets
- STS11N3LLH5

N-Channel Tape & Reel (TR) 14m Ω @ 5.5A, 10V +22V, -20V 724pF @ 25V 5nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
STS11N3LLH5 Overview
The maximum input capacitance of this device is 724pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 11A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 21 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 44A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 4 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
STS11N3LLH5 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 44A.
a threshold voltage of 1V
STS11N3LLH5 Applications
There are a lot of STMicroelectronics
STS11N3LLH5 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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