STS11N3LLH5
- Mfr.Part #
- STS11N3LLH5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11A 8SO
- Stock
- 80,117
- In Stock :
- 80,117
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 5.5A, 10V
- JESD-609 Code :
- e4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 22V
- Turn-Off Delay Time :
- 21 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Pins :
- 8
- Turn On Delay Time :
- 4 ns
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 11A
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Threshold Voltage :
- 1V
- Pin Count :
- 8
- Resistance :
- 13.2mOhm
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- +22V, -20V
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 724pF @ 25V
- Drain to Source Breakdown Voltage :
- 30V
- Rise Time :
- 4.2ns
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 2.7W Tc
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 44A
- Fall Time (Typ) :
- 3.5 ns
- Base Part Number :
- STS11
- Power Dissipation :
- 2.7W
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- N-Channel
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Nominal Vgs :
- 1 V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Series :
- STripFET™ V
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Form :
- Gull wing
- Number of Terminations :
- 8
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 4.5V
- Datasheets
- STS11N3LLH5

N-Channel Tape & Reel (TR) 14m Ω @ 5.5A, 10V +22V, -20V 724pF @ 25V 5nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
STS11N3LLH5 Overview
The maximum input capacitance of this device is 724pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 11A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 21 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 44A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 4 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
STS11N3LLH5 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 44A.
a threshold voltage of 1V
STS11N3LLH5 Applications
There are a lot of STMicroelectronics
STS11N3LLH5 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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