STS12N3LLH5
- Mfr.Part #
- STS12N3LLH5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 12A 8SO
- Stock
- 45,594
- In Stock :
- 45,594
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 8
- Input Capacitance (Ciss) (Max) @ Vds :
- 1290pF @ 25V
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Pin Count :
- 8
- Number of Terminations :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Packaging :
- Cut Tape (CT)
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Turn-Off Delay Time :
- 32.4 ns
- Rise Time :
- 11.2ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 12A
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 2.7W
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- 260
- Gate to Source Voltage (Vgs) :
- 22V
- Fall Time (Typ) :
- 6 ns
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Turn On Delay Time :
- 8.6 ns
- Case Connection :
- DRAIN
- Series :
- STripFET™ V
- Base Part Number :
- STS12
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 2.7W Tc
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e4
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 4.5V
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 30V
- Vgs (Max) :
- +22V, -20V
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 6A, 10V
- Drain-source On Resistance-Max :
- 0.0097Ohm
- Datasheets
- STS12N3LLH5

N-Channel Cut Tape (CT) 7.5m Ω @ 6A, 10V +22V, -20V 1290pF @ 25V 8nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
STS12N3LLH5 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1290pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 12A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 32.4 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.6 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 22V to 1.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
STS12N3LLH5 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 32.4 ns
a 30V drain to source voltage (Vdss)
STS12N3LLH5 Applications
There are a lot of STMicroelectronics
STS12N3LLH5 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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