STS10P3LLH6

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Mfr.Part #
STS10P3LLH6
Manufacturer
STMicroelectronics
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 10A 8SO
Stock
26,073
In Stock :
26,073

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 4.5V
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
12m Ω @ 5A, 10V
Lead Free :
Lead Free
Power Dissipation-Max :
2.7W Ta
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Continuous Drain Current (ID) :
10A
ECCN Code :
EAR99
Configuration :
Single
Series :
STripFET™ H6
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
30V
Operating Temperature :
-55°C~150°C TJ
Base Part Number :
STS10
Number of Pins :
8
Input Capacitance (Ciss) (Max) @ Vds :
3350pF @ 25V
FET Type :
P-Channel
Vgs(th) (Max) @ Id :
1V @ 250μA (Min)
Packaging :
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C :
10A Ta
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
20 Weeks
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STS10P3LLH6 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, Base Part Number:STS10, Number of Pins:8, STS10P3LLH6 pinout, STS10P3LLH6 datasheet PDF, STS10P3LLH6 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STS10P3LLH6 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STS10P3LLH6


P-Channel Cut Tape (CT) 12m Ω @ 5A, 10V ±20V 3350pF @ 25V 33nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)

STS10P3LLH6 Description

This device is a P-channel Power MOSFET developed using the STripFET? H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.


STS10P3LLH6 Features

Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss


STS10P3LLH6 Applications

Switching applications


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