STS10P3LLH6
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- Mfr.Part #
- STS10P3LLH6
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 10A 8SO
- Stock
- 26,073
- In Stock ：
- 26,073
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 2.7W Ta
- Factory Lead Time :
- 20 Weeks
- Lead Free :
- Lead Free
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Configuration :
- Single
- Vgs (Max) :
- ±20V
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3350pF @ 25V
- Continuous Drain Current (ID) :
- 10A
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 5A, 10V
- Base Part Number :
- STS10
- Series :
- STripFET™ H6
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Vgs(th) (Max) @ Id :
- 1V @ 250μA (Min)
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Cut Tape (CT)
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 4.5V
- Datasheets
- STS10P3LLH6
P-Channel Cut Tape (CT) 12m Ω @ 5A, 10V ±20V 3350pF @ 25V 33nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
STS10P3LLH6 Description
This device is a P-channel Power MOSFET developed using the STripFET? H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
STS10P3LLH6 Features
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
STS10P3LLH6 Applications
Switching applications
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