STS1DN45K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lead Free :

Lead Free

Base Part Number :

STS1D

Gate to Source Voltage (Vgs) :

30V

Drain Current-Max (Abs) (ID) :

0.5A

Drain to Source Breakdown Voltage :

450V

Continuous Drain Current (ID) :

500mA

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Series :

SuperMESH3™

Power Dissipation :

1.7W

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Drain to Source Voltage (Vdss) :

450V

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Mount :

Surface Mount

Max Power Dissipation :

1.3W

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

2A

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Transistor Application :

SWITCHING

Number of Pins :

8

Vgs(th) (Max) @ Id :

4.5V @ 50μA

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Pin Count :

8

JESD-609 Code :

e4

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

3.8 Ω @ 500mA, 10V

Element Configuration :

Dual

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Standard

Threshold Voltage :

3.75V

Resistance :

3.8Ohm

Transistor Element Material :

SILICON