STL65DN3LLH5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Memory Size :

768kB

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Number of Programmable I/O :

114

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Core Architecture :

ARM

Watchdog Timer :

yes

Resistance :

6.5mOhm

Number of Pins :

8

FET Type :

2 N-Channel (Dual)

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

22V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Interface :

CAN, I2C, I2S, SPI, UART, USART, USB

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Max Power Dissipation :

60W

Number of Terminations :

6

Pin Count :

8

Series :

STripFET™ V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

76A

Power Dissipation :

60W

Number of Elements :

2

ECCN Code :

EAR99

Lifecycle Status :

Obsolete (Last Updated: 7 months ago)

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 9.5A, 10V

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

RAM Size :

132kB

Number of Timers/Counters :

14

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

Memory Type :

Flash

Base Part Number :

STL65

Max Frequency :

120MHz

Package / Case :

8-PowerVDFN

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-N6

Data Bus Width :

32b

Continuous Drain Current (ID) :

65A

Drain Current-Max (Abs) (ID) :

19A

Operating Temperature :

-55°C~150°C TJ