STL60P4LLF6
- Mfr.Part #
- STL60P4LLF6
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 60A POWERFLAT
- Stock
- 22,994
- In Stock :
- 22,994
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3525pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Element Configuration :
- Single
- Terminal Form :
- Flat
- Transistor Element Material :
- SILICON
- FET Type :
- P-Channel
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PDSO-F5
- Continuous Drain Current (ID) :
- 60A
- Number of Elements :
- 1
- Series :
- STripFET™ F6
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.019Ohm
- Number of Terminations :
- 5
- Factory Lead Time :
- 20 Weeks
- Pulsed Drain Current-Max (IDM) :
- 240A
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Length :
- 6.35mm
- Base Part Number :
- STL60
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 4.5V
- Power Dissipation-Max :
- 100W Tc
- Height :
- 950μm
- Package / Case :
- 8-PowerVDFN
- Number of Pins :
- 8
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 49.4 ns
- Packaging :
- Cut Tape (CT)
- Turn-Off Delay Time :
- 170 ns
- Terminal Position :
- Dual
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 40V
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 40V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 1V @ 250μA (Min)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- 175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 6.5A, 10V
- Width :
- 5.4mm
- Datasheets
- STL60P4LLF6

P-Channel Cut Tape (CT) 14m Ω @ 6.5A, 10V ±20V 3525pF @ 25V 34nC @ 4.5V 40V 8-PowerVDFN
STL60P4LLF6 Description
This product is a P-channel Power MOSFET that has a novel trench gate structure and was designed utilizing STripFET F6 technology. In all packages, the resultant Power MOSFET displays extremely low RDS(on). These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
STL60P4LLF6 Features
? minimal on-resistance
? Minimal gate fee
? Extreme avalanche toughness
? Low power loss at the gate drive
STL60P4LLF6 Applications
Switching applications
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