STL6NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.92Ohm

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

600V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

25V

Power Dissipation-Max :

70W Tc

Number of Terminations :

12

Pulsed Drain Current-Max (IDM) :

23A

Turn-Off Delay Time :

40 ns

Series :

MDmesh™ II

Fall Time (Typ) :

9 ns

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Power Dissipation :

70W

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Rise Time :

8ns

Rds On (Max) @ Id, Vgs :

920m Ω @ 2.3A, 10V

Pin Count :

12

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 50V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Current - Continuous Drain (Id) @ 25°C :

5.75A Tc

Continuous Drain Current (ID) :

5.75A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

QUAD

Number of Pins :

8

Vgs(th) (Max) @ Id :

4V @ 250µA

Base Part Number :

STL6

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

65 mJ

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Mount :

Surface Mount

Number of Elements :

1

Package / Case :

8-PowerVDFN

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

1A

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±25V