STGWT80V60DF
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- Mfr.Part #
- STGWT80V60DF
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- IGBT 600V 120A 469W TO-3P
- Stock
- 16
- In Stock ：
- 16
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 80A
- Factory Lead Time :
- 32 Weeks
- Switching Energy :
- 1.8mJ (on), 1mJ (off)
- Gate-Emitter Voltage-Max :
- 20V
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 600V
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Gate Charge :
- 448nC
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Type :
- Standard
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector Pulsed (Icm) :
- 240A
- Mounting Type :
- Through Hole
- Td (on/off) @ 25°C :
- 60ns/220ns
- Operating Temperature :
- -55°C~175°C TJ
- Polarity/Channel Type :
- N-Channel
- Collector Emitter Saturation Voltage :
- 1.85V
- Reverse Recovery Time :
- 60 ns
- Package / Case :
- TO-3P-3, SC-65-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 469W
- Power - Max :
- 469W
- Test Condition :
- 400V, 80A, 5 Ω, 15V
- Weight :
- 6.756003g
- ECCN Code :
- EAR99
- Packaging :
- Tube
- IGBT Type :
- Trench Field Stop
- Max Collector Current :
- 120A
- Collector Emitter Voltage (VCEO) :
- 600V
- Base Part Number :
- STGWT80
- Datasheets
- STGWT80V60DF
STGWT80V60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGWT80V60DF Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.
STGWT80V60DF Features
Maximum junction temperature: TJ = 175 °C
Tail-less switching off
VCE(sat) = 1.85 V (typ.) @ IC = 80 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
STGWT80V60DF Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high-frequency converters
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