STGWT80H65FB
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- Mfr.Part #
- STGWT80H65FB
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- IGBT 650V 120A 469W TO3P-3L
- Stock
- 212
- In Stock ：
- 212
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Saturation Voltage :
- 1.6V
- Max Power Dissipation :
- 469W
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 120A
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Input Type :
- Standard
- Base Part Number :
- STGWT80
- Element Configuration :
- Single
- Power - Max :
- 469W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge :
- 414nC
- Collector Emitter Breakdown Voltage :
- 650V
- Mounting Type :
- Through Hole
- Switching Energy :
- 2.1mJ (on), 1.5mJ (off)
- Package / Case :
- TO-3P-3, SC-65-3
- Length :
- 15.8mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- IGBT Type :
- Trench Field Stop
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 80A
- Height :
- 20.1mm
- Test Condition :
- 400V, 80A, 10 Ω, 15V
- Td (on/off) @ 25°C :
- 84ns/280ns
- Weight :
- 6.756003g
- Collector Emitter Voltage (VCEO) :
- 650V
- Number of Pins :
- 3
- Gate-Emitter Thr Voltage-Max :
- 7V
- Mount :
- Through Hole
- Factory Lead Time :
- 32 Weeks
- Gate-Emitter Voltage-Max :
- 20V
- Current - Collector Pulsed (Icm) :
- 240A
- Operating Temperature :
- -55°C~175°C TJ
- Width :
- 5mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- STGWT80H65FB
STGWT80H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGWT80H65FB Description
The STGWT80H65FB is an IGBT developed using an advanced proprietary trench gate and field stop structure. It is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter.
STGWT80H65FB Features
-
Maximum junction temperature: TJ = 175 °C
-
High-speed switching series
-
Minimized tail current
-
VCE(sat) = 1.6 V (typ.) @ IC = 80 A
-
Tight parameter distribution
-
Safe paralleling
-
Low thermal resistance
STGWT80H65FB Applications
-
Photovoltaic inverters
-
High-frequency converters
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