STGWT60H65FB
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- Mfr.Part #
- STGWT60H65FB
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- IGBT 650V 80A 375W TO3P-3L
- Stock
- 2,620
- In Stock ：
- 2,620
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Max Collector Current :
- 80A
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 60A
- Radiation Hardening :
- No
- Packaging :
- Tube
- Element Configuration :
- Single
- Power - Max :
- 375W
- Collector Emitter Saturation Voltage :
- 1.6V
- IGBT Type :
- Trench Field Stop
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Package / Case :
- TO-3P-3, SC-65-3
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Td (on/off) @ 25°C :
- 51ns/160ns
- Current - Collector Pulsed (Icm) :
- 240A
- Base Part Number :
- STGWT60
- Weight :
- 6.756003g
- Factory Lead Time :
- 32 Weeks
- Height :
- 20.1mm
- RoHS Status :
- ROHS3 Compliant
- Width :
- 5mm
- Test Condition :
- 400V, 60A, 5 Ω, 15V
- Gate Charge :
- 306nC
- Length :
- 15.8mm
- Max Power Dissipation :
- 375W
- Input Type :
- Standard
- Switching Energy :
- 1.09mJ (on), 626μJ (off)
- Collector Emitter Breakdown Voltage :
- 650V
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Collector Emitter Voltage (VCEO) :
- 650V
- Datasheets
- STGWT60H65FB
STGWT60H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGWT60H65FB Description
STGWT60H65FB is a 650v Trench gate field-stop IGBT. The STGWT60H65FB is an IGBT device developed using an advanced proprietary trench gate and field-stop structure. The STGWT60H65FB is a part of the new HB series of IGBTs which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.
STGWT60H65FB Features
Maximum junction temperature: TJ = 175 °C
High-speed switching series
Minimized tail current
VCE(sat) = 1.6 V (typ.) @ IC = 60 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
STGWT60H65FB Applications
Photovoltaic inverters
High-frequency converters
Communications equipment
Wireless infrastructure
Enterprise systems
Datacenter & enterprise computing
Personal electronics
Portable electronics
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