STGWT60H65DFB
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- Mfr.Part #
- STGWT60H65DFB
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- IGBT 650V 80A 375W TO3P-3L
- Stock
- 19
- In Stock ：
- 19
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Polarity/Channel Type :
- N-Channel
- IGBT Type :
- Trench Field Stop
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Test Condition :
- 400V, 60A, 5 Ω, 15V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 650V
- Element Configuration :
- Single
- Input Type :
- Standard
- Gate-Emitter Voltage-Max :
- 20V
- Weight :
- 6.756003g
- Height :
- 20.1mm
- Base Part Number :
- STGWT60
- Package / Case :
- TO-3P-3, SC-65-3
- Number of Pins :
- 3
- Switching Energy :
- 1.09mJ (on), 626μJ (off)
- Packaging :
- Tube
- Max Power Dissipation :
- 375W
- Width :
- 5mm
- Current - Collector Pulsed (Icm) :
- 240A
- Collector Emitter Saturation Voltage :
- 1.6V
- Td (on/off) @ 25°C :
- 51ns/160ns
- Gate Charge :
- 306nC
- Max Collector Current :
- 80A
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 32 Weeks
- Collector Emitter Voltage (VCEO) :
- 650V
- Power - Max :
- 375W
- Reverse Recovery Time :
- 60 ns
- Mount :
- Through Hole
- Length :
- 15.8mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 60A
- Datasheets
- STGWT60H65DFB
STGWT60H65DFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
The STGWT60H65DFB device is IGBT developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGWT60H65DFB Features
Maximum junction temperature: TJ = 175 °C
High speed switching series
Minimized tail current
Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A
Tight parameter distribution
Safe paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast soft recovery antiparallel diode
STGWT60H65DFB Applications
Photovoltaic inverters
High-frequency converters
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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