STGWT60H60DLFB

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Mfr.Part #
STGWT60H60DLFB
Manufacturer
STMicroelectronics
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
IGBT 600V 80A 375W TO3P-3L
Stock
1,242
In Stock :
1,242

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Width :
5mm
Td (on/off) @ 25°C :
-/160ns
Current - Collector Pulsed (Icm) :
240A
Switching Energy :
626μJ (off)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Height :
20.1mm
RoHS Status :
ROHS3 Compliant
Collector Emitter Voltage (VCEO) :
600V
Collector Emitter Breakdown Voltage :
600V
Max Power Dissipation :
375W
Max Collector Current :
80A
IGBT Type :
Trench Field Stop
Input Type :
Standard
Mount :
Through Hole
Element Configuration :
Single
Factory Lead Time :
32 Weeks
Mounting Type :
Through Hole
Collector Emitter Saturation Voltage :
1.6V
Packaging :
Tube
Power - Max :
375W
Radiation Hardening :
No
Gate Charge :
306nC
Test Condition :
400V, 60A, 5 Ω, 15V
ECCN Code :
EAR99
Operating Temperature :
-55°C~175°C TJ
Package / Case :
TO-3P-3, SC-65-3
Number of Pins :
3
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 60A
Base Part Number :
STGWT60
Length :
15.8mm
Weight :
6.756003g
Datasheets
STGWT60H60DLFB
Introducing Transistors - IGBTs - Single STMicroelectronics STGWT60H60DLFB from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-3P-3, SC-65-3, Number of Pins:3, Base Part Number:STGWT60, STGWT60H60DLFB pinout, STGWT60H60DLFB datasheet PDF, STGWT60H60DLFB amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGWT60H60DLFB ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGWT60H60DLFB


STGWT60H60DLFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGWT60H60DLFB Description


This IGBT gadget was created employing a cutting-edge, exclusive trench gate and field stop structure. The device is a new "HB" series IGBT, which stands for the best compromise between conduction and switching losses for any frequency converter's efficiency. Additionally, a highly narrow parameter distribution and a little positive VCE(sat) temperature coefficient produce safer paralleling operation.



STGWT60H60DLFB Features


  • Paralleling safely

  • Low thermal conductivity

  • Co-packaged low VF soft recovery diode

  • Lead-free packaging



STGWT60H60DLFB Applications


  • Electric heating

  • A microwave

  • Converters with resonance


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