STGWT40H65FB

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Mfr.Part #
STGWT40H65FB
Manufacturer
STMicroelectronics
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
IGBT 650V 80A 283W TO3P-3L
Stock
6,664
In Stock :
6,664

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Gate Charge :
210nC
Element Configuration :
Single
Length :
15.8mm
Test Condition :
400V, 40A, 5 Ω, 15V
ECCN Code :
EAR99
Height :
20.1mm
Max Collector Current :
80A
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
IGBT Type :
Trench Field Stop
Collector Emitter Breakdown Voltage :
650V
Power - Max :
283W
Input Type :
Standard
Lifecycle Status :
NRND (Last Updated: 8 months ago)
Operating Temperature :
-55°C~175°C TJ
Mount :
Through Hole
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Weight :
6.756003g
Packaging :
Tube
Mounting Type :
Through Hole
Td (on/off) @ 25°C :
40ns/142ns
Collector Emitter Saturation Voltage :
1.6V
Base Part Number :
STGWT40
Collector Emitter Voltage (VCEO) :
650V
Width :
5mm
Package / Case :
TO-3P-3, SC-65-3
Number of Pins :
3
Switching Energy :
498mJ (on), 363mJ (off)
Vce(on) (Max) @ Vge, Ic :
2.3V @ 15V, 40A
Max Power Dissipation :
283W
Current - Collector Pulsed (Icm) :
160A
Datasheets
STGWT40H65FB
Introducing Transistors - IGBTs - Single STMicroelectronics STGWT40H65FB from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Base Part Number:STGWT40, Package / Case:TO-3P-3, SC-65-3, Number of Pins:3, STGWT40H65FB pinout, STGWT40H65FB datasheet PDF, STGWT40H65FB amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGWT40H65FB ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGWT40H65FB


STGWT40H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGWT40H65FB Description


The STGWT40H65FB IGBT was developed using an advanced proprietary trench gate field-stop structure. The transistor STGWT40H65FB  is a part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.



STGWT40H65FB Features


Maximum junction temperature: TJ = 175 °C

High-speed switching series

Minimized tail current

Very low saturation voltage: VCE(sat) = 1.6 V (Typ) @ IC = 40 A

Safe paralleling

Tight parameter distribution

Low thermal resistance



STGWT40H65FB Applications


Welding

Power factor correction

UPS

Solar inverters

Chargers


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