STGWT40H65DFB
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- Mfr.Part #
- STGWT40H65DFB
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- IGBT 650V 80A 283W TO3P-3L
- Stock
- 16,387
- In Stock ：
- 16,387
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Element Configuration :
- Single
- Gate-Emitter Voltage-Max :
- 20V
- IGBT Type :
- Trench Field Stop
- Length :
- 15.8mm
- Td (on/off) @ 25°C :
- 40ns/142ns
- Weight :
- 6.756003g
- Height :
- 20.1mm
- ECCN Code :
- EAR99
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 40A
- Width :
- 5mm
- Package / Case :
- TO-3P-3, SC-65-3
- Packaging :
- Tube
- Input Type :
- Standard
- Max Power Dissipation :
- 283W
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Current - Collector Pulsed (Icm) :
- 160A
- Number of Pins :
- 3
- Power - Max :
- 283W
- Max Collector Current :
- 80A
- Operating Temperature :
- -55°C~175°C TJ
- Polarity/Channel Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 650V
- Collector Emitter Voltage (VCEO) :
- 650V
- Test Condition :
- 400V, 40A, 5 Ω, 15V
- Switching Energy :
- 498μJ (on), 363μJ (off)
- Factory Lead Time :
- 32 Weeks
- Reverse Recovery Time :
- 62 ns
- Gate Charge :
- 210nC
- Base Part Number :
- STGWT40
- Collector Emitter Saturation Voltage :
- 1.6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- STGWT40H65DFB
STGWT40H65DFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGWT40H65DFB Description
STGWT40H65DFB is an IGBT Transistor. The STMicroelectronics STGWT40H65DFB is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGWT40H65DFB is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Additionally, the slightly positive VCE(sat) temperature coefficient and extremely narrow parameter distribution result in a safer paralleling operation.
STGWT40H65DFB Features
-
Minimized tail current
-
Maximum junction temperature: TJ = 175 °C
-
Low thermal resistance
-
High-speed switching series
-
Safe paralleling
-
Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
-
Tight parameter distribution
-
Positive VCE(sat) temperature coefficient
-
Very fast soft recovery antiparallel diode
STGWT40H65DFB Applications
-
Stand-alone inverters
-
Grid-tie inverters
-
Battery backup inverters
-
Intelligent hybrid inverters,
-
High-frequency converters
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