STGWT40H60DLFB

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Mfr.Part #
STGWT40H60DLFB
Manufacturer
STMicroelectronics
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
IGBT 600V 80A 283W TO3P-3L
Stock
443
In Stock :
443

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Number of Pins :
3
Packaging :
Tube
Test Condition :
400V, 40A, 10 Ω, 15V
Mount :
Through Hole
IGBT Type :
Trench Field Stop
Switching Energy :
363μJ (off)
Height :
20.1mm
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~175°C TJ
Current - Collector Pulsed (Icm) :
160A
Width :
5mm
Gate-Emitter Voltage-Max :
20V
Collector Emitter Voltage (VCEO) :
600V
ECCN Code :
EAR99
Radiation Hardening :
No
Max Collector Current :
80A
Package / Case :
TO-3P-3, SC-65-3
Polarity/Channel Type :
N-Channel
Base Part Number :
STGWT40
Power - Max :
283W
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 40A
Mounting Type :
Through Hole
Weight :
6.756003g
Length :
15.8mm
Input Type :
Standard
Gate Charge :
210nC
Max Power Dissipation :
283W
Collector Emitter Breakdown Voltage :
600V
Collector Emitter Saturation Voltage :
1.6V
Td (on/off) @ 25°C :
-/142ns
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
STGWT40H60DLFB
Introducing Transistors - IGBTs - Single STMicroelectronics STGWT40H60DLFB from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-3P-3, SC-65-3, Base Part Number:STGWT40, Mounting Type:Through Hole, STGWT40H60DLFB pinout, STGWT40H60DLFB datasheet PDF, STGWT40H60DLFB amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGWT40H60DLFB ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGWT40H60DLFB


STGWT40H60DLFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGWT40H60DLFB Description


The  STGWT40H60DLFB is an IGBT developed using an advanced proprietary trench gate field stop structure. It is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. 



STGWT40H60DLFB Features


  • Maximum junction temperature: TJ = 175 °C

  • High-speed switching series

  • Minimized tail current

  • Low saturation voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 40 A

  • Tight parameters distribution

  • Safe paralleling

  • Low thermal resistance

  • Low VF soft recovery co-packaged diode

  • Lead-free package



STGWT40H60DLFB Applications


  • Induction heating

  • Microwave oven

  • Resonant converters


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