STGWT30V60DF

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Mfr.Part #
STGWT30V60DF
Manufacturer
STMicroelectronics
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
IGBT 600V 60A 258W TO3P-3
Stock
6,514
In Stock :
6,514

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-3P-3, SC-65-3
ECCN Code :
EAR99
Base Part Number :
STGWT30
Mounting Type :
Through Hole
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
600V
Radiation Hardening :
No
Reverse Recovery Time :
53 ns
IGBT Type :
Trench Field Stop
Vce(on) (Max) @ Vge, Ic :
2.3V @ 15V, 30A
Current - Collector Pulsed (Icm) :
120A
Width :
5.7mm
Max Power Dissipation :
258W
Td (on/off) @ 25°C :
45ns/189ns
RoHS Status :
ROHS3 Compliant
Power Dissipation :
258W
Max Collector Current :
60A
Operating Temperature :
-55°C~175°C TJ
Packaging :
Tube
Collector Emitter Saturation Voltage :
2.35V
Element Configuration :
Single
Collector Emitter Voltage (VCEO) :
600V
Number of Pins :
3
Input Type :
Standard
Gate Charge :
163nC
Test Condition :
400V, 30A, 10 Ω, 15V
Height :
26.7mm
Length :
15.7mm
Factory Lead Time :
32 Weeks
Switching Energy :
383μJ (on), 233μJ (off)
Datasheets
STGWT30V60DF
Introducing Transistors - IGBTs - Single STMicroelectronics STGWT30V60DF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Base Part Number:STGWT30, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, STGWT30V60DF pinout, STGWT30V60DF datasheet PDF, STGWT30V60DF amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGWT30V60DF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGWT30V60DF


STGWT30V60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGWT30V60DF Description


This STGWT30V60DF is an IGBT developed using an advanced proprietary trench gate field stop structure. The STGWT30V60DF is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.



STGWT30V60DF Features


Maximum junction temperature: TJ = 175 °C

Tail-less switching off

VCE(sat) = 1.85 V (typ.) @ IC = 30 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

Very fast soft recovery antiparallel diode



STGWT30V60DF Applications


Photovoltaic inverters

Uninterruptible power supply

Welding

Power factor correction

Very high-frequency converters


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