STGWT30H65FB
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- Mfr.Part #
- STGWT30H65FB
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- IGBT 650V 30A 260W TO3PL
- Stock
- 464
- In Stock ：
- 464
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 30A
- Collector Emitter Breakdown Voltage :
- 650V
- Collector Emitter Saturation Voltage :
- 1.75V
- Lead Free :
- Lead Free
- Switching Energy :
- 151μJ (on), 293μJ (off)
- Gate Charge :
- 149nC
- IGBT Type :
- Trench Field Stop
- Power - Max :
- 260W
- Input Type :
- Standard
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Part Number :
- STGWT30
- Mounting Type :
- Through Hole
- Max Collector Current :
- 30A
- Test Condition :
- 400V, 30A, 10 Ω, 15V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- RoHS Status :
- ROHS3 Compliant
- Td (on/off) @ 25°C :
- 37ns/146ns
- Element Configuration :
- Single
- Packaging :
- Tube
- Factory Lead Time :
- 32 Weeks
- Current - Collector Pulsed (Icm) :
- 120A
- Package / Case :
- TO-3P-3, SC-65-3
- Max Power Dissipation :
- 260W
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 650V
- Weight :
- 6.756003g
- Operating Temperature :
- -55°C~175°C TJ
- ECCN Code :
- EAR99
- Datasheets
- STGWT30H65FB
STGWT30H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGWT30H65FB Description
The STGWT30H65FB is a Trench gate field-stop IGBT, HB series 650 V, 30 A high speed. These gadgets are IGBTs that were created employing a cutting-edge, exclusive trench gate fieldstop structure. These components are a part of the latest generation of IGBTs, the HB series, which offer the best conduction and switching loss trade-offs for maximizing the efficiency of any frequency converter. Additionally, the extremely narrow parameter distribution and slightly positive VCE(sat) temperature coefficient lead to safer paralleling operations.
STGWT30H65FB Features
-
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
-
Tight parameters distribution
-
Safe paralleling
-
Low thermal resistance
-
Maximum junction temperature: TJ = 175 °C
-
High speed switching series
-
Minimized tail current
STGWT30H65FB Applications
-
Welding
-
High-frequency converters
-
Photovoltaic inverters
-
Power factor correction
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