STGWT20V60F
- Mfr.Part #
- STGWT20V60F
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- IGBT 600V 40A 167W TO3PF
- Stock
- 587
- In Stock :
- 587
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Test Condition :
- 400V, 20A, 15V
- Transistor Element Material :
- SILICON
- Pin Count :
- 2
- Max Collector Current :
- 40A
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 20A
- Number of Elements :
- 1
- Height :
- 20.1mm
- Turn On Time :
- 49 ns
- IGBT Type :
- Trench Field Stop
- Collector Emitter Saturation Voltage :
- 2.3V
- Package / Case :
- TO-3P-3, SC-65-3
- Transistor Application :
- POWER CONTROL
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 3
- Max Power Dissipation :
- 167W
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Power Dissipation :
- 167W
- Switching Energy :
- 200μJ (on), 130μJ (off)
- Factory Lead Time :
- 32 Weeks
- Width :
- 5mm
- Radiation Hardening :
- No
- Turn Off Time-Nom (toff) :
- 173 ns
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge :
- 116nC
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 600V
- Td (on/off) @ 25°C :
- 38ns/149ns
- Length :
- 15.8mm
- Current - Collector Pulsed (Icm) :
- 80A
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Base Part Number :
- STGWT20
- RoHS Status :
- ROHS3 Compliant
- Input Type :
- Standard
- Case Connection :
- COLLECTOR
- Packaging :
- Tube
- Datasheets
- STGWT20V60F

STGWT20V60F datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGWT20V60F Description
This STGWT20V60F is an IGBT developed using an advanced proprietary trench gate field stop structure. The STGWT20V60F is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.
STGWT20V60F Features
Maximum junction temperature: TJ = 175 °C
Tail-less switching off
VCE(sat) = 1.8 V (typ.) @ IC = 20 A
Tight parameter distribution
Safe paralleling
Low thermal resistance
STGWT20V60F Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high-frequency converters
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