STGWT20IH125DF
- Mfr.Part #
- STGWT20IH125DF
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- IGBT 1250V 40A 259W TO-3P
- Stock
- 1,354
- In Stock :
- 1,354
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Factory Lead Time :
- 32 Weeks
- Max Power Dissipation :
- 259W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- STGWT20
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Power - Max :
- 259W
- RoHS Status :
- ROHS3 Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 1250V
- Switching Energy :
- 410μJ (off)
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Test Condition :
- 600V, 15A, 10 Ω, 15V
- Input Type :
- Standard
- Td (on/off) @ 25°C :
- -/106ns
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 15A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Weight :
- 6.756003g
- Max Collector Current :
- 40A
- Collector Emitter Saturation Voltage :
- 2.55V
- Current - Collector Pulsed (Icm) :
- 80A
- IGBT Type :
- Trench Field Stop
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Package / Case :
- TO-3P-3, SC-65-3
- Gate Charge :
- 68nC
- Collector Emitter Voltage (VCEO) :
- 1.25kV
- Collector Emitter Breakdown Voltage :
- 1.25kV
- Datasheets
- STGWT20IH125DF

STGWT20IH125DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGWT20IH125DF Description
These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application.
STGWT20IH125DF Features
? Designed for soft commutation only
? Maximum junction temperature: TJ = 175 ° C
? Minimized tail current
? VCE(sat) = 2.0 V (typ.) @ IC = 15 A
? Tight parameters distribution
? Safe paralleling
? Very low VF soft recovery co-packaged diode
? Low thermal resistance
? Lead free package
STGWT20IH125DF Applications
? Induction heating
? Microwave oven
? Resonant converters
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