STGWT20IH125DF

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Mfr.Part #
STGWT20IH125DF
Manufacturer
STMicroelectronics
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
IGBT 1250V 40A 259W TO-3P
Stock
1,354
In Stock :
1,354

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Mounting Type :
Through Hole
Number of Pins :
3
Factory Lead Time :
32 Weeks
Max Power Dissipation :
259W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Base Part Number :
STGWT20
Mount :
Through Hole
Operating Temperature :
-55°C~175°C TJ
Power - Max :
259W
RoHS Status :
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max) :
1250V
Switching Energy :
410μJ (off)
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Test Condition :
600V, 15A, 10 Ω, 15V
Input Type :
Standard
Td (on/off) @ 25°C :
-/106ns
Vce(on) (Max) @ Vge, Ic :
2.5V @ 15V, 15A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Weight :
6.756003g
Max Collector Current :
40A
Collector Emitter Saturation Voltage :
2.55V
Current - Collector Pulsed (Icm) :
80A
IGBT Type :
Trench Field Stop
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Package / Case :
TO-3P-3, SC-65-3
Gate Charge :
68nC
Collector Emitter Voltage (VCEO) :
1.25kV
Collector Emitter Breakdown Voltage :
1.25kV
Datasheets
STGWT20IH125DF
Introducing Transistors - IGBTs - Single STMicroelectronics STGWT20IH125DF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Base Part Number:STGWT20, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-3P-3, SC-65-3, STGWT20IH125DF pinout, STGWT20IH125DF datasheet PDF, STGWT20IH125DF amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGWT20IH125DF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGWT20IH125DF


STGWT20IH125DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGWT20IH125DF                           Description


These IGBTs are developed using an advanced proprietary trench gate field-stop structure and  performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize  efficiency for any resonant and soft-switching application.



 

STGWT20IH125DF                        Features


? Designed for soft commutation only

? Maximum junction temperature: TJ = 175 ° C

? Minimized tail current

? VCE(sat) = 2.0 V (typ.) @ IC = 15 A

? Tight parameters distribution

? Safe paralleling

? Very low VF soft recovery co-packaged diode

? Low thermal resistance

? Lead free package


STGWT20IH125DF                        Applications


? Induction heating

? Microwave oven

? Resonant converters


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