STGWT20H65FB
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- Mfr.Part #
- STGWT20H65FB
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- IGBT 650V 40A 168W TO3P
- Stock
- 577
- In Stock ：
- 577
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 20A
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- N-Channel
- IGBT Type :
- Trench Field Stop
- Factory Lead Time :
- 32 Weeks
- Switching Energy :
- 77μJ (on), 170μJ (off)
- Test Condition :
- 400V, 20A, 10 Ω, 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 650V
- Collector Emitter Saturation Voltage :
- 1.55V
- Max Power Dissipation :
- 168W
- Weight :
- 6.756003g
- Gate-Emitter Voltage-Max :
- 20V
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Td (on/off) @ 25°C :
- 30ns/139ns
- Current - Collector Pulsed (Icm) :
- 80A
- Collector Emitter Breakdown Voltage :
- 650V
- ECCN Code :
- EAR99
- Input Type :
- Standard
- Package / Case :
- TO-3P-3, SC-65-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power - Max :
- 168W
- Max Collector Current :
- 40A
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Gate Charge :
- 120nC
- Base Part Number :
- STGWT20
- Packaging :
- Tube
- Gate-Emitter Thr Voltage-Max :
- 7V
- Datasheets
- STGWT20H65FB
STGWT20H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGWT20H65FB Description
This IGBT was created employing a cutting-edge, exclusive trench gate field-stop construction. The component is a new HB series IGBT, which offers the best conduction and switching loss trade-off for any frequency converter's efficiency. Additionally, the extremely narrow parameter distribution and slightly positive VCE(sat) temperature coefficient lead to safer paralleling operation.
STGWT20H65FB Features
-
TJ = 175 °C is the maximum junction temperature.
-
succession of fast switching
-
reduce the tail current
-
IC = 20 A, VCE(sat) = 1.55 V (typ. ),
-
distribution of tight parameters
-
Paralleling safely
-
a minimal heat resistance
STGWT20H65FB Applications
Switching applications
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