STGWA40S120DF3
- Mfr.Part #
- STGWA40S120DF3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1200V 40A TO247-3L
- Stock
- 55
- In Stock :
- 55
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- IGBT Type :
- Trench Field Stop
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-247-3
- Reverse Recovery Time :
- 355 ns
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- POWER CONTROL
- Test Condition :
- 600V, 40A, 15 Ω, 15V
- Polarity/Channel Type :
- N-Channel
- Turn Off Time-Nom (toff) :
- 158.46 ns
- Vce(on) (Max) @ Vge, Ic :
- 2.15V @ 15V, 40A
- Base Part Number :
- STGWA40
- Packaging :
- Tube
- Td (on/off) @ 25°C :
- 35ns/148ns
- Max Collector Current :
- 80A
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Pulsed (Icm) :
- 160A
- Collector Emitter Voltage (VCEO) :
- 2.15V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Through Hole
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- COLLECTOR
- Gate Charge :
- 129nC
- Switching Energy :
- 1.43mJ (on), 3.83mJ (off)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Factory Lead Time :
- 32 Weeks
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSFM-T3
- Input Type :
- Standard
- Power - Max :
- 468W
- Max Power Dissipation :
- 468W
- Turn On Time :
- 50 ns
- Datasheets
- STGWA40S120DF3

STGWA40S120DF3 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGWA40S120DF3 Description
STGWA40S120DF3, part of the S series of 1200 V IGBTs, is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It is specifically designed to achieve maximal efficiency in low-frequency industrial systems. Due to its positive VCE(sat) temperature coefficient and tight parameter distribution, a safer paralleling operation can be achieved.
STGWA40S120DF3 Features
Available in the TO-247 package
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and fast recovery antiparallel diode
STGWA40S120DF3 Applications
Industrial drives
UPS
Solar
Welding
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