STGWA40M120DF3
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- Mfr.Part #
- STGWA40M120DF3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1200V 80A 468W TO-247-3
- Stock
- 7,413
- In Stock ：
- 7,413
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Collector Emitter Saturation Voltage :
- 1.85V
- Gate-Emitter Voltage-Max :
- 20V
- Current - Collector Pulsed (Icm) :
- 160A
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- ECCN Code :
- EAR99
- Td (on/off) @ 25°C :
- 35ns/140ns
- Mount :
- Through Hole
- Gate Charge :
- 125nC
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Mounting Type :
- Through Hole
- Input Type :
- Standard
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 80A
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 40A
- Number of Pins :
- 3
- Reverse Recovery Time :
- 355 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- IGBT Type :
- Trench Field Stop
- Package / Case :
- TO-247-3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- REACH SVHC :
- No SVHC
- Test Condition :
- 600V, 40A, 10 Ω, 15V
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 468W
- Weight :
- 38.000013g
- Packaging :
- Tube
- Base Part Number :
- STGWA40
- Switching Energy :
- 1.03mJ (on), 480μJ (off)
- Gate-Emitter Thr Voltage-Max :
- 7V
- Factory Lead Time :
- 30 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Polarity/Channel Type :
- N-Channel
- Power - Max :
- 468W
- Datasheets
- STGWA40M120DF3
STGWA40M120DF3 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGWA40M120DF3 Description
The STGWA40M120DF3 is a Trench gate field-stop IGBT developed using an advanced proprietary Trench gate field-stop structure. The STGWA40M120DF3 is part of the M family of IGBTs, which provide the best performance tradeoff for inverter systems where low-loss and short-circuit capability are critical. A positive VCE(sat) temperature coefficient and a narrow parameter distribution also result in a safer paralleling operation.
STGWA40M120DF3 Features
-
Tight parameters distribution
-
Safer paralleling
-
Low thermal resistance
-
Soft and fast recovery anti-parallel diode
-
10μs Short-circuit withstand time
STGWA40M120DF3 Applications
-
Industrial drives
-
UPS
-
Solar
-
Welding
-
turning shafts
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