STGWA40HP65FB2
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- Mfr.Part #
- STGWA40HP65FB2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRENCH GATE FIELD-STOP, 650 V, 4
- Stock
- 43
- In Stock ：
- 43
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 227W
- Switching Energy :
- 410μJ (off)
- Input Type :
- Standard
- IGBT Type :
- Trench Field Stop
- Package / Case :
- TO-247-3
- Reverse Recovery Time :
- 140ns
- Gate Charge :
- 153nC
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 30 Weeks
- Current - Collector (Ic) (Max) :
- 72A
- RoHS Status :
- ROHS3 Compliant
- Td (on/off) @ 25°C :
- -/125ns
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Pulsed (Icm) :
- 120A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 40A
- Voltage - Collector Emitter Breakdown (Max) :
- 650V
- Series :
- HB2
- Test Condition :
- 400V, 40A, 4.7 Ω, 15V
- Datasheets
- STGWA40HP65FB2
STGWA40HP65FB2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGWA40HP65FB2 Description
The STGWA40HP65FB2 from STMicroelectronics' newest IGBT 650 V HB2 series is an advancement of the advanced patented trench gate field-stop construction. The HB2 series' performance is optimized in terms of conduction, thanks to improved VCE(sat) behaviour at low current values, as well as reduced switching energy. A diode used solely for safety is co-packaged antiparallel with the IGBT.
STGWA40HP65FB2 Features
-
Tight parameter distribution
-
Low thermal resistance
-
Positive VCE(sat) temperature coefficient
-
Maximum junction temperature : TJ = 175 °C
-
Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A
-
Co-packaged protection diode
-
Minimized tail current
STGWA40HP65FB2 Applications
-
Power factor correction
-
Welding
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