STGWA30N120KD
- Mfr.Part #
- STGWA30N120KD
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1200V 60A 220W TO247
- Stock
- 5,454
- In Stock :
- 5,454
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Number of Terminations :
- 3
- Input Type :
- Standard
- Number of Elements :
- 1
- Td (on/off) @ 25°C :
- 36ns/251ns
- Operating Temperature :
- -55°C~125°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- Vce(on) (Max) @ Vge, Ic :
- 3.85V @ 15V, 20A
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 60A
- Base Part Number :
- STGWA30
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Transistor Application :
- Motor Control
- Number of Pins :
- 3
- Reach Compliance Code :
- not_compliant
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Test Condition :
- 960V, 20A, 10 Ω, 15V
- Series :
- PowerMESH™
- Max Power Dissipation :
- 220W
- Current - Collector Pulsed (Icm) :
- 100A
- JESD-609 Code :
- e3
- Package / Case :
- TO-247-3
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge :
- 105nC
- Collector Emitter Voltage (VCEO) :
- 3.85V
- RoHS Status :
- ROHS3 Compliant
- Switching Energy :
- 2.4mJ (on), 4.3mJ (off)
- Turn Off Time-Nom (toff) :
- 756 ns
- Power - Max :
- 220W
- Reverse Recovery Time :
- 84 ns
- Turn On Time :
- 57 ns
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Gate-Emitter Voltage-Max :
- 25V
- Datasheets
- STGWA30N120KD

STGWA30N120KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGWA30N120KD Description
STGWA30N120KD is a member of IGBTs co-packaged with an Ultrafast free-wheeling diode. It is designed based on an advanced proprietary trench gate and field stop structure. It is able to deliver an excellent trade-off between switching performance and low on-state behavior. The STGWA30N120KD IGBT is supplied in the TO-247 package to save board space.
STGWA30N120KD Features
Supplied in the TO-247 package
Low on-losses
High current capability
Low gate charge
Short circuit withstand time 10 μs
STGWA30N120KD Applications
Motor control
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