STGWA30H65DFB

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Mfr.Part #
STGWA30H65DFB
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT
Stock
8,275
In Stock :
8,275

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Input Type :
Standard
Current - Collector (Ic) (Max) :
60A
Operating Temperature :
-55°C~175°C TJ
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 30A
Mounting Type :
Through Hole
Gate Charge :
149nC
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
260W
IGBT Type :
Trench Field Stop
Current - Collector Pulsed (Icm) :
120A
Series :
HB
Base Part Number :
STGWA30
Factory Lead Time :
20 Weeks
Td (on/off) @ 25°C :
46ns/146ns
Package / Case :
TO-247-3
Switching Energy :
382μJ (on), 293μJ (off)
Voltage - Collector Emitter Breakdown (Max) :
650V
Reverse Recovery Time :
140ns
Reach Compliance Code :
Compliant
Test Condition :
400V, 30A, 10 Ω, 15V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
STGWA30H65DFB
Introducing Transistors - IGBTs - Single STMicroelectronics STGWA30H65DFB from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Base Part Number:STGWA30, Package / Case:TO-247-3, STGWA30H65DFB pinout, STGWA30H65DFB datasheet PDF, STGWA30H65DFB amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGWA30H65DFB ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGWA30H65DFB


STGWA30H65DFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at


STGWA30H65DFB                    Description


This device is an IGBT developed using an   advanced proprietary trench gate field-stop   structure. The device is part of the new HB series   of IGBTs, which represents an optimum   compromise between conduction and switching   loss to maximize the efficiency of any frequenc   converter. Furthermore, the slightly positive   VCE(sat) temperature coefficient and very tight   parameter distribution result in safer paralleling   operation.



STGWA30H65DFB                       Features


· Maximum junction temperature: TJ = 175 °C

· High speed switching series

· Minimized tail current

· Low saturation voltage: VCE(sat) = 1.55 V

(typ.) @ IC = 30 A

· Tight parameter distribution

· Safe paralleling

· Low thermal resistance

· Very fast soft recovery antiparallel diode

 

STGWA30H65DFB                       Applications

· Photovoltaic inverters

· High frequency converters

 


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