STGWA15M120DF3
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- Mfr.Part #
- STGWA15M120DF3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1200V 30A 259W
- Stock
- 1,485
- In Stock ：
- 1,485
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Td (on/off) @ 25°C :
- 26ns/122ns
- Operating Temperature :
- -55°C~175°C TJ
- Reverse Recovery Time :
- 270 ns
- IGBT Type :
- Trench Field Stop
- Factory Lead Time :
- 30 Weeks
- Collector Emitter Saturation Voltage :
- 1.85V
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power - Max :
- 259W
- Max Power Dissipation :
- 259W
- Switching Energy :
- 550μJ (on), 850μJ (off)
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Max Collector Current :
- 30A
- Element Configuration :
- Single
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 15A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Gate Charge :
- 53nC
- Weight :
- 38.000013g
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Test Condition :
- 600V, 15A, 22 Ω, 15V
- Package / Case :
- TO-247-3
- Input Type :
- Standard
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Current - Collector Pulsed (Icm) :
- 60A
- RoHS Status :
- ROHS3 Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Base Part Number :
- STGWA15
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Mount :
- Through Hole
- Datasheets
- STGWA15M120DF3
STGWA15M120DF3 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGWA15M120DF3 Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capabilities are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in a safer paralleling operation.
STGWA15M120DF3 Features
10 μS of short-circuit withstand time
VCcE(sat)= 1.85V (Typ.)@lc=15A
Tight parameters distribution
Safer paralleling
Low thermal resistance
Soft and fast recovery antiparallel diode
STGWA15M120DF3 Applications
Industrial drives
UPS
Solar
Welding
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