STGW80V60DF
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- Mfr.Part #
- STGW80V60DF
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3 Exposed Pad
- Datasheet
- Download
- Description
- IGBT 600V 120A 469W TO247
- Stock
- 27
- In Stock ：
- 27
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Test Condition :
- 400V, 80A, 5 Ω, 15V
- Collector Emitter Breakdown Voltage :
- 600V
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Collector Emitter Saturation Voltage :
- 1.85V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Gate Charge :
- 448nC
- Power - Max :
- 469W
- Width :
- 5.15mm
- REACH SVHC :
- No SVHC
- IGBT Type :
- Trench Field Stop
- Package / Case :
- TO-247-3 Exposed Pad
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Switching Energy :
- 1.8mJ (on), 1mJ (off)
- Height :
- 20.15mm
- Td (on/off) @ 25°C :
- 60ns/220ns
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Through Hole
- Input Type :
- Standard
- ECCN Code :
- EAR99
- Max Collector Current :
- 120A
- Reverse Recovery Time :
- 60 ns
- Gate-Emitter Voltage-Max :
- 20V
- Collector Emitter Voltage (VCEO) :
- 600V
- Factory Lead Time :
- 20 Weeks
- Radiation Hardening :
- No
- Weight :
- 38.000013g
- Base Part Number :
- STGW80
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 80A
- Max Power Dissipation :
- 469W
- Length :
- 15.75mm
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Pulsed (Icm) :
- 240A
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Datasheets
- STGW80V60DF
STGW80V60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGW80V60DF Description
STGW80V60DF, manufactured by STMicroelectronics, is a type of insulated gate bipolar transistor (IGBT) with an advanced proprietary trench gate field stop structure, which is a part of the V series of IGBTs. It is able to deliver both low conduction and low switching losses, so as to improve the efficiency of very high-frequency converters. Based on its positive VCE(sat) temperature coefficient and tight parameter distribution, a safer paralleling operation can be ensured.
STGW80V60DF Features
-
Positive VCE(sat) temperature coefficient
-
Tight parameter distribution
-
Low conduction and switching losses
-
Available in the TO-247 and TO-3P package
-
An advanced proprietary trench gate field stop structure
STGW80V60DF Applications
-
Welding
-
Photovoltaic inverters
-
Power factor correction
-
Uninterruptible power supplies
-
Very high-frequency converters
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