STGW80H65DFB-4
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- Mfr.Part #
- STGW80H65DFB-4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-4
- Datasheet
- Download
- Description
- IGBT BIPO 650V 80A TO247
- Stock
- 27,470
- In Stock ：
- 27,470
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Base Part Number :
- STGW80
- Element Configuration :
- Single
- Package / Case :
- TO-247-4
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power - Max :
- 469W
- Current - Collector Pulsed (Icm) :
- 240A
- Collector Emitter Voltage (VCEO) :
- 2V
- Test Condition :
- 400V, 80A, 10 Ω, 15V
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 469W
- Gate Charge :
- 414nC
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 650V
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Max Collector Current :
- 120A
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 80A
- IGBT Type :
- Trench Field Stop
- Factory Lead Time :
- 20 Weeks
- Td (on/off) @ 25°C :
- 84ns/280ns
- Switching Energy :
- 2.1mJ (on), 1.5mJ (off)
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Input Type :
- Standard
- ECCN Code :
- EAR99
- Reverse Recovery Time :
- 85 ns
- Datasheets
- STGW80H65DFB-4
STGW80H65DFB-4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
Features:
• High-voltage, high-current device
• Maximum collector-emitter voltage of 800V
• Maximum collector current of 65A
• Low on-state voltage drop
• Low switching losses
• High frequency operation
• Low gate charge
• Low gate-emitter voltage
• High surge current capability
Applications: The STGW80H65DFB-4 is suitable for use in a variety of power applications, such as motor control, power supplies, UPS systems, and solar inverters. It is also suitable for use in high-power switching applications, such as welding and plasma cutting.
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