STGW60V60F

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Mfr.Part #
STGW60V60F
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 80A 375W TO247
Stock
3
In Stock :
3

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Td (on/off) @ 25°C :
60ns/208ns
Collector Emitter Voltage (VCEO) :
600V
Input Type :
Standard
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~175°C TJ
Turn On Delay Time :
60 ns
Factory Lead Time :
20 Weeks
Mount :
Through Hole
Element Configuration :
Single
Turn-Off Delay Time :
208 ns
Switching Energy :
750μJ (on), 550μJ (off)
Max Power Dissipation :
375W
Vce(on) (Max) @ Vge, Ic :
2.3V @ 15V, 60A
ECCN Code :
EAR99
Gate Charge :
334nC
Current - Collector Pulsed (Icm) :
240A
Max Collector Current :
80A
Test Condition :
400V, 60A, 4.7 Ω, 15V
Lead Free :
Lead Free
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Power Dissipation :
375W
Height :
20.15mm
Width :
5.15mm
Collector Emitter Breakdown Voltage :
600V
Base Part Number :
STGW60
Mounting Type :
Through Hole
Length :
15.75mm
Number of Pins :
3
Collector Emitter Saturation Voltage :
2.35V
IGBT Type :
Trench Field Stop
Package / Case :
TO-247-3
Datasheets
STGW60V60F
Introducing Transistors - IGBTs - Single STMicroelectronics STGW60V60F from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Base Part Number:STGW60, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-247-3, STGW60V60F pinout, STGW60V60F datasheet PDF, STGW60V60F amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGW60V60F ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGW60V60F


STGW60V60F datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGW60V60F Description


This IGBT was created employing a cutting-edge, exclusive trench gate fieldstop structure. The device is a component of the V series of IGBTs, which stand for the best conduction and switching losses compromise for very high frequency converters. Additionally, safer paralleling operation is produced by the positive VCE(sat) temperature coefficient and extremely narrow parameter distribution.



STGW60V60F Features


  • Maximum junction temperature: TJ = 175 °C

  • Tail-less switching off

  • VCE(sat) = 1.85 V (typ.) @ IC = 60 A

  • Tight parameter distribution

  • Safe paralleling

  • Low thermal resistance



STGW60V60F Applications


  • Photovoltaic inverters

  • Uninterruptible power supply

  • Welding

  • Power factor correction

  • Very high frequency converters


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