STGW60H65FB

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Mfr.Part #
STGW60H65FB
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 650V 80A 375W TO247
Stock
499
In Stock :
499

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Gate Charge :
306nC
RoHS Status :
ROHS3 Compliant
Input Type :
Standard
Width :
5.15mm
Operating Temperature :
-55°C~175°C TJ
Td (on/off) @ 25°C :
51ns/160ns
Collector Emitter Saturation Voltage :
1.6V
Lead Free :
Lead Free
Switching Energy :
1.09mJ (on), 626μJ (off)
IGBT Type :
Trench Field Stop
Number of Pins :
3
Max Collector Current :
80A
ECCN Code :
EAR99
Element Configuration :
Single
Mount :
Through Hole
Max Power Dissipation :
375W
Height :
20.15mm
Power Dissipation :
375W
Package / Case :
TO-247-3
Current - Collector Pulsed (Icm) :
240A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Vce(on) (Max) @ Vge, Ic :
2.3V @ 15V, 60A
Collector Emitter Voltage (VCEO) :
650V
Base Part Number :
STGW60
Test Condition :
400V, 60A, 5 Ω, 15V
Length :
15.75mm
Collector Emitter Breakdown Voltage :
650V
Mounting Type :
Through Hole
Factory Lead Time :
20 Weeks
Packaging :
Tube
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Datasheets
STGW60H65FB
Introducing Transistors - IGBTs - Single STMicroelectronics STGW60H65FB from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Package / Case:TO-247-3, Base Part Number:STGW60, Mounting Type:Through Hole, STGW60H65FB pinout, STGW60H65FB datasheet PDF, STGW60H65FB amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGW60H65FB ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGW60H65FB


STGW60H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGW60H65FB Description


These advanced proprietary trench gate and field-stop structures-based IGBT devices were created. These components are a part of the new HB series of IGBTs, which offer the best conduction and switching loss trade-offs for maximizing the efficiency of any frequency converter. Additionally, a highly narrow parameter distribution and a little positive VCE(sat) temperature coefficient produce safer paralleling operation.



STGW60H65FB Features


? TJ = 175 °C is the maximum junction temperature.


? Series of high-speed switches


? Tail current was reduced.


? IC = 60 A, VCE(sat) = 1.6 V (typ.)


? Closely spaced parameter distribution


? Paralleling safely


? Low thermal conductivity



STGW60H65FB Applications


  • solar power inverters

  • The use of high frequency converters


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