STGW60H65DRF

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Mfr.Part #
STGW60H65DRF
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 650V 120A 420W TO247
Stock
2,658
In Stock :
2,658

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Mount :
Through Hole
Packaging :
Tube
Mounting Type :
Through Hole
Weight :
6.500007g
Td (on/off) @ 25°C :
85ns/178ns
Terminal Finish :
Tin (Sn)
Collector Emitter Breakdown Voltage :
650V
Gate Charge :
217nC
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Element Configuration :
Single
Switching Energy :
940μJ (on), 1.06mJ (off)
Collector Emitter Saturation Voltage :
1.9V
Max Collector Current :
120A
Operating Temperature :
-55°C~175°C TJ
Factory Lead Time :
32 Weeks
Gate-Emitter Voltage-Max :
20V
Polarity/Channel Type :
N-Channel
Current - Collector Pulsed (Icm) :
240A
Package / Case :
TO-247-3
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Test Condition :
400V, 60A, 10 Ω, 15V
Collector Emitter Voltage (VCEO) :
650V
Reverse Recovery Time :
19 ns
Power - Max :
420W
Base Part Number :
STGW60
ECCN Code :
EAR99
JESD-609 Code :
e3
Max Power Dissipation :
420W
Input Type :
Standard
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
IGBT Type :
Trench Field Stop
Radiation Hardening :
No
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 60A
Datasheets
STGW60H65DRF
Introducing Transistors - IGBTs - Single STMicroelectronics STGW60H65DRF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-247-3, Base Part Number:STGW60, STGW60H65DRF pinout, STGW60H65DRF datasheet PDF, STGW60H65DRF amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGW60H65DRF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGW60H65DRF


STGW60H65DRF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGW60H65DRF  Description

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. This IGBT is the result of a compromise

between conduction and switching losses,

maximizing the efficiency of high switching

frequency converters. Furthermore, a slightly

positive VCE(sat) temperature coefficient and very

tight parameter distribution result in easier

paralleling operation.



STGW60H65DRF  Features

Very high speed switching

Tight parameters distribution

Safe paralleling

Low thermal resistance

6 μs short-circuit withstand time

Ultrafast soft recovery antiparallel diode



STGW60H65DRF  Applications

Photovoltaic inverters

Uninterruptible power supply

Welding

Power factor correction

High switching frequency converters


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