STGW60H65DF

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Lead Free :

Lead Free

Mount :

Through Hole

Gate Charge :

206nC

Input Type :

Standard

Power - Max :

360W

Transistor Application :

POWER CONTROL

Current - Collector Pulsed (Icm) :

240A

Turn On Time :

113 ns

JESD-609 Code :

e3

Factory Lead Time :

32 Weeks

Max Collector Current :

120A

Package / Case :

TO-247-3

Switching Energy :

1.5mJ (on), 1.1mJ (off)

Collector Emitter Voltage (VCEO) :

350V

Mounting Type :

Through Hole

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Collector Emitter Breakdown Voltage :

650V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STGW60

Number of Elements :

1

Max Power Dissipation :

360W

Radiation Hardening :

No

Packaging :

Tube

Td (on/off) @ 25°C :

67ns/165ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

Turn On Delay Time :

67 ns

Operating Temperature :

-55°C~150°C TJ

Weight :

6.500007g

Turn Off Time-Nom (toff) :

247 ns

Turn-Off Delay Time :

165 ns

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Test Condition :

400V, 60A, 10 Ω, 15V

Collector Emitter Saturation Voltage :

2.1V

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

IGBT Type :

Trench Field Stop

Number of Terminations :

3

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 60A

Gate-Emitter Voltage-Max :

20V

Reverse Recovery Time :

62 ns