STGW40S120DF3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

JESD-30 Code :

R-PSFM-T3

Current - Collector Pulsed (Icm) :

160A

Base Part Number :

STGW40

Voltage - Collector Emitter Breakdown (Max) :

1200V

Max Power Dissipation :

468W

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

IGBT Type :

Trench Field Stop

Polarity/Channel Type :

N-Channel

Transistor Application :

POWER CONTROL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reverse Recovery Time :

355 ns

Test Condition :

600V, 40A, 15 Ω, 15V

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

1.2kV

Factory Lead Time :

41 Weeks

Mounting Type :

Through Hole

Package / Case :

TO-247-3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Vce(on) (Max) @ Vge, Ic :

2.15V @ 15V, 40A

Turn Off Time-Nom (toff) :

158.46 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Switching Energy :

1.43mJ (on), 3.83mJ (off)

REACH SVHC :

No SVHC

Case Connection :

COLLECTOR

Input Type :

Standard

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

Not Applicable

Packaging :

Tube

Td (on/off) @ 25°C :

35ns/148ns

Turn On Time :

50 ns

Power - Max :

468W

Number of Terminations :

3

Max Collector Current :

80A

Gate Charge :

129nC

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Collector Emitter Voltage (VCEO) :

2.15V