STGW40N120KD
- Mfr.Part #
- STGW40N120KD
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1200V 80A 240W TO247
- Stock
- 6,101
- In Stock :
- 6,101
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Weight :
- 6.500007g
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Current - Collector Pulsed (Icm) :
- 120A
- Collector Emitter Saturation Voltage :
- 2.8V
- Turn On Delay Time :
- 48 ns
- Operating Temperature :
- -55°C~125°C TJ
- Power - Max :
- 240W
- Height :
- 21.07mm
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 420 ns
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- STGW40
- Test Condition :
- 960V, 30A, 10 Ω, 15V
- Transistor Application :
- Motor Control
- Vce(on) (Max) @ Vge, Ic :
- 3.85V @ 15V, 30A
- Number of Terminations :
- 3
- Turn Off Time-Nom (toff) :
- 564 ns
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Polarity/Channel Type :
- N-Channel
- ECCN Code :
- EAR99
- Reverse Recovery Time :
- 84 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate-Emitter Voltage-Max :
- 25V
- Turn On Time :
- 83 ns
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Width :
- 5.15mm
- Max Collector Current :
- 80A
- Number of Pins :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Gate Charge :
- 126nC
- Switching Energy :
- 3.7mJ (on), 5.7mJ (off)
- Input Type :
- Standard
- Length :
- 16.02mm
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Td (on/off) @ 25°C :
- 48ns/338ns
- Pin Count :
- 3
- Max Power Dissipation :
- 240W
- Number of Elements :
- 1
- Package / Case :
- TO-247-3
- Mounting Type :
- Through Hole
- Series :
- PowerMESH™
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Datasheets
- STGW40N120KD

STGW40N120KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGW40N120KD Description
The STGW40N120KD high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low ON-state behavior.
STGW40N120KD Features
-
Low on-losses
-
High current capability
-
Low gate charge
-
Short circuit withstand time 10 μs
-
IGBT co-packaged with Ultrafast free-wheeling diode
-
ROHS3 Compliant
-
No SVHC
-
Lead Free
STGW40N120KD Applications
-
Motor control
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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