STGW40H65DFB
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- Mfr.Part #
- STGW40H65DFB
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 650V 80A 283W TO-247
- Stock
- 294
- In Stock ：
- 294
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Breakdown Voltage :
- 650V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 20 Weeks
- Length :
- 15.75mm
- Collector Emitter Saturation Voltage :
- 1.8V
- Polarity/Channel Type :
- N-Channel
- Number of Pins :
- 3
- Max Collector Current :
- 80A
- IGBT Type :
- Trench Field Stop
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Reverse Recovery Time :
- 62 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Part Number :
- STGW40
- Weight :
- 38.000013g
- Mount :
- Through Hole
- Power - Max :
- 283W
- Test Condition :
- 400V, 40A, 5 Ω, 15V
- Input Type :
- Standard
- Package / Case :
- TO-247-3
- ECCN Code :
- EAR99
- Current - Collector Pulsed (Icm) :
- 160A
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 650V
- Max Power Dissipation :
- 283W
- Gate Charge :
- 210nC
- Td (on/off) @ 25°C :
- 40ns/142ns
- Height :
- 20.15mm
- Width :
- 5.15mm
- Switching Energy :
- 498μJ (on), 363μJ (off)
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 40A
- Gate-Emitter Voltage-Max :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tube
- Datasheets
- STGW40H65DFB
STGW40H65DFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGW40H65DFB Description
The STGW40H65DFB is an IGBT that was created with a patented trench gate field stop construction. The STGW40H65DFB is part of the new HB series of IGBTs, which offers the best balance of conduction and switching loss for maximum frequency converter efficiency. In addition, the slightly positive VCE(sat) temperature coefficient and extremely tight parameter distribution make paralleling safer.
STGW40H65DFB Features
-
Maximum junction temperature: TJ = 175 °C
-
High-speed switching series
-
Minimized tail current
-
Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
-
Tight parameter distribution
-
Safe paralleling
-
Positive VCE(sat) temperature coefficient
-
Low thermal resistance
-
Very fast soft recovery antiparallel diode
STGW40H65DFB Applications
-
Photovoltaic inverters
-
High-frequency converters
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