STGW40H60DLFB
- Mfr.Part #
- STGW40H60DLFB
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 80A 283W TO-247
- Stock
- 49,501
- In Stock :
- 49,501
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Max Collector Current :
- 80A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector Pulsed (Icm) :
- 160A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 1.6V
- Packaging :
- Tube
- Power - Max :
- 283W
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge :
- 210nC
- Gate-Emitter Voltage-Max :
- 20V
- Test Condition :
- 400V, 40A, 10 Ω, 15V
- Factory Lead Time :
- 20 Weeks
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Weight :
- 38.000013g
- Base Part Number :
- STGW40
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 600V
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 600V
- Number of Pins :
- 3
- Package / Case :
- TO-247-3
- Length :
- 15.75mm
- Switching Energy :
- 363μJ (off)
- Height :
- 20.15mm
- Td (on/off) @ 25°C :
- -/142ns
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Width :
- 5.15mm
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 40A
- Max Power Dissipation :
- 283W
- Input Type :
- Standard
- IGBT Type :
- Trench Field Stop
- Datasheets
- STGW40H60DLFB

STGW40H60DLFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGW40H60DLFB is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGW40H60DLFB Features
Maximum junction temperature: TJ = 175 °C
High speed switching series
Minimized tail current
Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Low VF soft recovery co-packaged diode
Lead free package
STGW40H60DLFB Applications
Induction heating
Microwave oven
Resonant converters
New energy vehicles,
photovoltaic & wind power generation
smart grid
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