STGW40H60DLFB

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Mfr.Part #
STGW40H60DLFB
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 80A 283W TO-247
Stock
49,501
In Stock :
49,501

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Max Collector Current :
80A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Collector Pulsed (Icm) :
160A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Saturation Voltage :
1.6V
Packaging :
Tube
Power - Max :
283W
Polarity/Channel Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge :
210nC
Gate-Emitter Voltage-Max :
20V
Test Condition :
400V, 40A, 10 Ω, 15V
Factory Lead Time :
20 Weeks
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~175°C TJ
Weight :
38.000013g
Base Part Number :
STGW40
Mounting Type :
Through Hole
Collector Emitter Voltage (VCEO) :
600V
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
600V
Number of Pins :
3
Package / Case :
TO-247-3
Length :
15.75mm
Switching Energy :
363μJ (off)
Height :
20.15mm
Td (on/off) @ 25°C :
-/142ns
Element Configuration :
Single
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Width :
5.15mm
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 40A
Max Power Dissipation :
283W
Input Type :
Standard
IGBT Type :
Trench Field Stop
Datasheets
STGW40H60DLFB
Introducing Transistors - IGBTs - Single STMicroelectronics STGW40H60DLFB from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Base Part Number:STGW40, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-247-3, STGW40H60DLFB pinout, STGW40H60DLFB datasheet PDF, STGW40H60DLFB amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGW40H60DLFB ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGW40H60DLFB


STGW40H60DLFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGW40H60DLFB Description

STGW40H60DLFB is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGW40H60DLFB Features

Maximum junction temperature: TJ = 175 °C
High speed switching series
Minimized tail current
Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Low VF soft recovery co-packaged diode
Lead free package
STGW40H60DLFB Applications

Induction heating
Microwave oven
Resonant converters
New energy vehicles,
photovoltaic & wind power generation
smart grid
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