STGW38IH130D

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Element Configuration :

Single

Pbfree Code :

yes

Switching Energy :

3.4mJ (off)

Collector Emitter Saturation Voltage :

2.1V

Max Power Dissipation :

250W

Gate Charge :

127nC

Current - Collector Pulsed (Icm) :

125A

Td (on/off) @ 25°C :

-/284ns

Input Type :

Standard

Packaging :

Tube

Weight :

6.500007g

Collector Emitter Breakdown Voltage :

1.3kV

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

1.3kV

Turn Off Time-Nom (toff) :

740 ns

Turn-Off Delay Time :

424 ns

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 20A

Height :

20.15mm

Lead Free :

Lead Free

Length :

15.75mm

Gate-Emitter Thr Voltage-Max :

5.75V

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Series :

PowerMESH™

Transistor Element Material :

SILICON

Number of Elements :

1

Width :

5.15mm

Number of Pins :

3

Package / Case :

TO-247-3

Pin Count :

3

Terminal Finish :

Matte Tin (Sn)

Mount :

Through Hole

ECCN Code :

EAR99

Test Condition :

960V, 20A, 10 Ω, 15V

Power - Max :

250W

Voltage - Collector Emitter Breakdown (Max) :

1300V

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

55A

Base Part Number :

STGW38

Gate-Emitter Voltage-Max :

25V

Max Collector Current :

63A

Number of Terminations :

3