STGW35NB60SD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Collector Emitter Saturation Voltage :

1.7V

Turn On Time :

153 ns

Base Part Number :

STGW35

Voltage - Rated DC :

600V

ECCN Code :

EAR99

Element Configuration :

Single

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

600V

REACH SVHC :

No SVHC

Switching Energy :

840μJ (on), 7.4mJ (off)

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Mount :

Through Hole

Number of Terminations :

3

Packaging :

Tube

Width :

5.15mm

Turn Off Time-Nom (toff) :

3600 ns

Gate-Emitter Thr Voltage-Max :

5V

Transistor Element Material :

SILICON

Package / Case :

TO-247-3

Rise Time :

70ns

Factory Lead Time :

8 Weeks

Current Rating :

35A

Max Collector Current :

70A

Height :

20.15mm

Max Breakdown Voltage :

600V

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

250A

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 20A

Collector Emitter Breakdown Voltage :

600V

Reverse Recovery Time :

44 ns

Power Dissipation :

200W

Input Type :

Standard

Pin Count :

3

Test Condition :

480V, 20A, 100 Ω, 15V

Drain to Source Voltage (Vdss) :

600V

Lead Free :

Lead Free

Length :

15.75mm

JEDEC-95 Code :

TO-247AA

Td (on/off) @ 25°C :

92ns/1.1μs

Series :

PowerMESH™

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Continuous Drain Current (ID) :

70A

Number of Elements :

1

Gate-Emitter Voltage-Max :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Gate Charge :

83nC

Transistor Application :

Motor Control

Max Power Dissipation :

200W