STGW35HF60WD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Operating Temperature :

-55°C~150°C TJ

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 20A

Element Configuration :

Single

Gate Charge :

140nC

Radiation Hardening :

No

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Turn-Off Delay Time :

175 ns

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Gate-Emitter Voltage-Max :

20V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Reverse Recovery Time :

85 ns

Package / Case :

TO-247-3

Base Part Number :

STGW35

ECCN Code :

EAR99

Transistor Application :

POWER CONTROL

Input Type :

Standard

Switching Energy :

185μJ (off)

JESD-609 Code :

e3

Td (on/off) @ 25°C :

30ns/175ns

Turn On Delay Time :

35 ns

Turn On Time :

45 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Max Power Dissipation :

200W

Packaging :

Tube

Max Collector Current :

60A

Collector Emitter Breakdown Voltage :

600V

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Gate-Emitter Thr Voltage-Max :

5.75V

Factory Lead Time :

8 Weeks

Mounting Type :

Through Hole

Power - Max :

200W

Transistor Element Material :

SILICON

Test Condition :

390V, 20A, 10 Ω, 15V

Lead Free :

Lead Free

Current - Collector Pulsed (Icm) :

150A

Turn Off Time-Nom (toff) :

295 ns

Collector Emitter Voltage (VCEO) :

600V