STGW30V60DF

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Power Dissipation :

258W

Element Configuration :

Single

Number of Elements :

1

Packaging :

Tube

Mounting Type :

Through Hole

Base Part Number :

STGW30

ECCN Code :

EAR99

Factory Lead Time :

20 Weeks

Width :

5.15mm

Collector Emitter Voltage (VCEO) :

600V

Input Type :

Standard

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 30A

Collector Emitter Breakdown Voltage :

600V

Td (on/off) @ 25°C :

45ns/189ns

Current - Collector Pulsed (Icm) :

120A

Height :

20.15mm

Turn Off Time-Nom (toff) :

225 ns

Max Power Dissipation :

258W

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Reverse Recovery Time :

53 ns

Turn On Time :

59 ns

IGBT Type :

Trench Field Stop

Operating Temperature :

-55°C~175°C TJ

Test Condition :

400V, 30A, 10 Ω, 15V

Number of Pins :

3

Collector Emitter Saturation Voltage :

2.35V

Transistor Application :

POWER CONTROL

Gate Charge :

163nC

Length :

15.75mm

Switching Energy :

383μJ (on), 233μJ (off)

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Max Collector Current :

60A

Radiation Hardening :

No

Transistor Element Material :

SILICON

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)